Tribological Study on Photocatalysis-Assisted Chemical Mechanical Polishing of SiC

نویسندگان

چکیده

Silicon carbide (SiC) is widely used as a power semiconductor substrate material, even if it takes large amount of processing time to secure an appropriate surface wafer for devices after chemical mechanical polishing (CMP). Therefore, studies on SiC CMP have focused shortening the by increasing material removal efficiency. Among methods that been studied recently, photocatalysis-assisted (PCMP) method known efficiently increase rate (MRR) under UV light and photocatalysts. However, limited number comparative conducted PCMP from tribology perspective. In this article, study was perspective CMP, mixed abrasive slurry (MAS CMP), PCMP. The experimental results demonstrated has higher friction temperature than MAS general which may be caused photocatalytic oxidation TiO2 particles

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ژورنال

عنوان ژورنال: Lubricants

سال: 2023

ISSN: ['2075-4442']

DOI: https://doi.org/10.3390/lubricants11050229